FQP17N08 Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 80V 16.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 8.25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Description: MOSFET N-CH 80V 16.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 8.25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 2331 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
888+ | 0.55 EUR |
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Technische Details FQP17N08 Fairchild Semiconductor
Description: MOSFET N-CH 80V 16.5A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc), Rds On (Max) @ Id, Vgs: 115mOhm @ 8.25A, 10V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V.
Weitere Produktangebote FQP17N08
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
FQP17N08 | Hersteller : ONSEMI |
Description: ONSEMI - FQP17N08 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 2331 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP17N08 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 16.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 8.25A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
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