FQP2P25 onsemi

Description: MOSFET P-CH 250V 2.3A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 52W (Tc), Rds On (Max) @ Id, Vgs: 4Ohm @ 1.15A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.