FQP4N80 ONSEMI
Hersteller: ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 7.95 EUR |
| 10+ | 7.15 EUR |
| 12+ | 5.96 EUR |
| 33+ | 2.17 EUR |
| 250+ | 1.33 EUR |
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Technische Details FQP4N80 ONSEMI
Description: MOSFET N-CH 800V 3.9A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V.
Weitere Produktangebote FQP4N80 nach Preis ab 7.95 EUR bis 7.95 EUR
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FQP4N80 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.47A Pulsed drain current: 15.6A Power dissipation: 130W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQP4N80 | Hersteller : Fairchild |
07+ |
auf Bestellung 45 Stücke: Lieferzeit 21-28 Tag (e) |
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FQP4N80 Produktcode: 162318
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FQP4N80 | Hersteller : onsemi |
Description: MOSFET N-CH 800V 3.9A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V |
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