Technische Details FQP58N08 Fairchild
Description: MOSFET N-CH 80V 57.5A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 146W (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 28.75A, 10V, Current - Continuous Drain (Id) @ 25°C: 57.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote FQP58N08
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FQP58N08 | onsemi |
 Description: MOSFET N-CH 80V 57.5A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 146W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 28.75A, 10V Current - Continuous Drain (Id) @ 25°C: 57.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
FQP58N08 | onsemi / Fairchild |
MOSFET 80V N-Channel QFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FQP58N08 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 57.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 146W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 28.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 57.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 80V 57.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 146W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 28.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 57.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQP58N08 |
|
Hersteller: onsemi / Fairchild
MOSFET 80V N-Channel QFET
MOSFET 80V N-Channel QFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH