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FQPF30N06L onsemi


fqpf30n06l-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 60V 22.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 11.3A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
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Technische Details FQPF30N06L onsemi

Description: MOSFET N-CH 60V 22.5A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 11.3A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V.

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FQPF30N06L FQPF30N06L onsemi / Fairchild FQPF30N06L_D-1809816.pdf MOSFET 60V N-Channel QFET Logic Level
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FQPF30N06L FQPF30N06L_D-1809816.pdf
Hersteller: onsemi / Fairchild
MOSFET 60V N-Channel QFET Logic Level
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Im Einkaufswagen  Stück im Wert von  UAH