auf Bestellung 597 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 367+ | 1.48 EUR |
| 500+ | 1.28 EUR |
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Technische Details FQPF4N60 FAIRCHILD
Description: MOSFET N-CH 600V 2.6A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.3A, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V.
Weitere Produktangebote FQPF4N60 nach Preis ab 1.14 EUR bis 1.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FQPF4N60 | Hersteller : FAIRCHILD |
FQPF4N60 |
auf Bestellung 2150 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQPF4N60 | Hersteller : FAIRCHILD |
FQPF4N60 |
auf Bestellung 2028 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQPF4N60 | Hersteller : Fairchild |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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FQPF4N60 | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 600V 2.6A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.3A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQPF4N60 | Hersteller : onsemi |
Description: MOSFET N-CH 600V 2.6A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.3A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQPF4N60 | Hersteller : onsemi / Fairchild |
MOSFETs 600V N-Channel QFET |
Produkt ist nicht verfügbar |