
FQPF7N65CYDTU ON Semiconductor
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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405+ | 1.37 EUR |
500+ | 1.26 EUR |
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Technische Details FQPF7N65CYDTU ON Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, N, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3 (Y-Forming), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V.
Weitere Produktangebote FQPF7N65CYDTU nach Preis ab 1.26 EUR bis 1.55 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FQPF7N65CYDTU | Hersteller : ON Semiconductor |
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auf Bestellung 772 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF7N65CYDTU | Hersteller : Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V |
auf Bestellung 1572 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF7N65CYDTU | Hersteller : ON Semiconductor |
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auf Bestellung 154 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF7N65CYDTU | Hersteller : ON Semiconductor |
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auf Bestellung 154 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF7N65CYDTU | Hersteller : FAIRCHILD |
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auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF7N65CYDTU | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FQPF7N65CYDTU | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V |
Produkt ist nicht verfügbar |