FQPF8N60CYDTU ON Semiconductor
auf Bestellung 1141 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 244+ | 2.17 EUR |
| 500+ | 1.89 EUR |
| 1000+ | 1.67 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQPF8N60CYDTU ON Semiconductor
Description: MOSFET N-CH 600V 7.5A TO220F-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3 (Y-Forming), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V.
Weitere Produktangebote FQPF8N60CYDTU nach Preis ab 1.89 EUR bis 2.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|
FQPF8N60CYDTU | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220F Rail |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
|
FQPF8N60CYDTU | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220F Rail |
auf Bestellung 503 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
|
FQPF8N60CYDTU | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 600V 7.5A TO220F-3Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V |
auf Bestellung 1924 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
| FQPF8N60CYDTU | Hersteller : ONSEMI |
Description: ONSEMI - FQPF8N60CYDTU - MISCELLANEOUS MOSFETStariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1924 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||
|
|
FQPF8N60CYDTU | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220F Rail |
Produkt ist nicht verfügbar |
|||||||
|
FQPF8N60CYDTU | Hersteller : onsemi |
Description: MOSFET N-CH 600V 7.5A TO220F-3Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||
|
FQPF8N60CYDTU | Hersteller : onsemi / Fairchild |
MOSFET 600V N-Ch Q-FET advance C-Series |
Produkt ist nicht verfügbar |



