FQT4N20TF Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 200V 850MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 425mA, 10V
Power Dissipation (Max): 2.2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 952+ | 0.54 EUR |
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Technische Details FQT4N20TF Fairchild Semiconductor
Description: MOSFET N-CH 200V 850MA SOT223-4, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-223-4, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 2.2W (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 425mA, 10V, Current - Continuous Drain (Id) @ 25°C: 850mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FQT4N20TF | onsemi |
Description: MOSFET N-CH 200V 850MA SOT223-4 Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-223-4 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.2W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 425mA, 10V Current - Continuous Drain (Id) @ 25°C: 850mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FQT4N20TF |
|
Hersteller: onsemi
Description: MOSFET N-CH 200V 850MA SOT223-4
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.2W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 425mA, 10V
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 200V 850MA SOT223-4
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.2W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 425mA, 10V
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH