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FQT4N20TF

FQT4N20TF Fairchild Semiconductor

FAIRS17866-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 200V 850MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 425mA, 10V
Power Dissipation (Max): 2.2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
auf Bestellung 2363 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
952+0.54 EUR
Mindestbestellmenge: 952
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FQT4N20TF Fairchild Semiconductor

Description: MOSFET N-CH 200V 850MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 850mA (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 425mA, 10V, Power Dissipation (Max): 2.2W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: SOT-223-4, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V.

Weitere Produktangebote FQT4N20TF nach Preis ab 0.47 EUR bis 0.47 EUR

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FQT4N20TF Hersteller : FAIRCHILD FAIRS17866-1.pdf?t.download=true&u=5oefqw FQT4N20.pdf FQT4N20TF
auf Bestellung 2363 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1164+0.47 EUR
Mindestbestellmenge: 1164
Im Einkaufswagen  Stück im Wert von  UAH
FQT4N20TF Hersteller : ONSEMI FAIRS17866-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - FQT4N20TF - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 2363 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FQT4N20TF FQT4N20TF Hersteller : onsemi FQT4N20.pdf Description: MOSFET N-CH 200V 850MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 425mA, 10V
Power Dissipation (Max): 2.2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
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