auf Bestellung 3458 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.69 EUR |
| 10+ | 1.50 EUR |
| 100+ | 1.17 EUR |
| 500+ | 0.97 EUR |
Produktrezensionen
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Technische Details FQU4N50TU-WS onsemi / Fairchild
Description: MOSFET N-CH 500V 2.6A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.3A, 10V, Power Dissipation (Max): 2.5W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: IPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V.
Weitere Produktangebote FQU4N50TU-WS
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FQU4N50TU_WS | Hersteller : Fairchild Semiconductor |
 Description: MOSFET N-CH 500V 2.6A IPAK |
auf Bestellung 5030 Stücke: Lieferzeit 10-14 Tag (e) |
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FQU4N50TU-WS | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 2.6A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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| FQU4N50TU-WS | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.64A; Idm: 10.4A; 45W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.64A Pulsed drain current: 10.4A Power dissipation: 45W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQU4N50TU-WS | Hersteller : onsemi |
Description: MOSFET N-CH 500V 2.6A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.3A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FQU4N50TU-WS | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.64A; Idm: 10.4A; 45W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.64A Pulsed drain current: 10.4A Power dissipation: 45W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |