FR606 EIC Semiconductor

Description: DIODE GEN PURP 800V 6A R-6, Capacitance @ Vr, F: 100pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 500 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: R-6, Axial, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 10 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 800 V, Operating Temperature - Junction: -65°C ~ 125°C, Supplier Device Package: R-6, Current - Average Rectified (Io): 6A.