FS03MR12A7MA2BHPSA1 INFINEON
Hersteller: INFINEON
Description: INFINEON - FS03MR12A7MA2BHPSA1 - Siliziumkarbid-MOSFET, SixPack, n-Kanal, 310 A, 1.2 kV, 0.00254 mohm, Modul
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 310A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4.55V
MOSFET-Modul-Konfiguration: SixPack
Verlustleistung: -
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: Modul
Anzahl der Pins: 9Pin(s)
Produktpalette: HybridPACK Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 18V
Drain-Source-Durchgangswiderstand: 0.00254mohm
Produktrezensionen
Produktbewertung abgeben
Technische Details FS03MR12A7MA2BHPSA1 INFINEON
Description: INFINEON - FS03MR12A7MA2BHPSA1 - Siliziumkarbid-MOSFET, SixPack, n-Kanal, 310 A, 1.2 kV, 0.00254 mohm, Modul, tariffCode: 85412900, euEccn: NLR, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: YES, Dauer-Drainstrom Id: 310A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 4.55V, MOSFET-Modul-Konfiguration: SixPack, Verlustleistung: -, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: Modul, Anzahl der Pins: 9Pin(s), Produktpalette: HybridPACK Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 18V, Drain-Source-Durchgangswiderstand: 0.00254mohm.
Weitere Produktangebote FS03MR12A7MA2BHPSA1 nach Preis ab 1496.31 EUR bis 2580.41 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
FS03MR12A7MA2BHPSA1 | Infineon Technologies |
MOSFET Modules HYBRID PACK DRIVE G2 SIC |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||
 |
FS03MR12A7MA2BHPSA1 | Infineon Technologies |
Description: MOSFET 6N-CH 1200V 310A Vgs(th) (Max) @ Id: 4.55V @ 120mA FET Feature: Silicon Carbide (SiC) Gate Charge (Qg) (Max) @ Vgs: 870nC @ 18V Rds On (Max) @ Id, Vgs: 2.54mOhm @ 310A, 18V Input Capacitance (Ciss) (Max) @ Vds: 25900pF @ 750V Current - Continuous Drain (Id) @ 25°C: 310A Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 6 N-Channel Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FS03MR12A7MA2BHPSA1 |
|
Hersteller: Infineon Technologies
MOSFET Modules HYBRID PACK DRIVE G2 SIC
MOSFET Modules HYBRID PACK DRIVE G2 SIC
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1696.4 EUR |
| 12+ | 1496.31 EUR |
| FS03MR12A7MA2BHPSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET 6N-CH 1200V 310A
Vgs(th) (Max) @ Id: 4.55V @ 120mA
FET Feature: Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs: 870nC @ 18V
Rds On (Max) @ Id, Vgs: 2.54mOhm @ 310A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 25900pF @ 750V
Current - Continuous Drain (Id) @ 25°C: 310A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 6 N-Channel
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: MOSFET 6N-CH 1200V 310A
Vgs(th) (Max) @ Id: 4.55V @ 120mA
FET Feature: Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs: 870nC @ 18V
Rds On (Max) @ Id, Vgs: 2.54mOhm @ 310A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 25900pF @ 750V
Current - Continuous Drain (Id) @ 25°C: 310A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 6 N-Channel
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 2580.41 EUR |