Technische Details FS03MR12A7MA2BHPSA1 Infineon Technologies
Description: MOSFET 6N-CH 1200V 310A, Vgs(th) (Max) @ Id: 4.55V @ 120mA, FET Feature: Silicon Carbide (SiC), Gate Charge (Qg) (Max) @ Vgs: 870nC @ 18V, Rds On (Max) @ Id, Vgs: 2.54mOhm @ 310A, 18V, Input Capacitance (Ciss) (Max) @ Vds: 25900pF @ 750V, Current - Continuous Drain (Id) @ 25°C: 310A, Drain to Source Voltage (Vdss): 1200V (1.2kV), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 6 N-Channel, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Box.
Weitere Produktangebote FS03MR12A7MA2BHPSA1 nach Preis ab 2168.41 EUR bis 2168.41 EUR
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FS03MR12A7MA2BHPSA1 | Infineon Technologies |
 Description: MOSFET 6N-CH 1200V 310AVgs(th) (Max) @ Id: 4.55V @ 120mA FET Feature: Silicon Carbide (SiC) Gate Charge (Qg) (Max) @ Vgs: 870nC @ 18V Rds On (Max) @ Id, Vgs: 2.54mOhm @ 310A, 18V Input Capacitance (Ciss) (Max) @ Vds: 25900pF @ 750V Current - Continuous Drain (Id) @ 25°C: 310A Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 6 N-Channel Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| FS03MR12A7MA2BHPSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 6N-CH 1200V 310A
Vgs(th) (Max) @ Id: 4.55V @ 120mA
FET Feature: Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs: 870nC @ 18V
Rds On (Max) @ Id, Vgs: 2.54mOhm @ 310A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 25900pF @ 750V
Current - Continuous Drain (Id) @ 25°C: 310A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 6 N-Channel
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: MOSFET 6N-CH 1200V 310A
Vgs(th) (Max) @ Id: 4.55V @ 120mA
FET Feature: Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs: 870nC @ 18V
Rds On (Max) @ Id, Vgs: 2.54mOhm @ 310A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 25900pF @ 750V
Current - Continuous Drain (Id) @ 25°C: 310A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 6 N-Channel
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2168.41 EUR |