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FS100R12W2T7_B11 Infineon



Hersteller: Infineon
FS100R12W2T7_B11 FS100R12W2T7B11BOMA1 IGBT MOD 1200V 100A 20MW EASY Силові IGBT-модулі
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Technische Details FS100R12W2T7_B11 Infineon

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Collector current: 100A, Topology: IGBT three-phase bridge; NTC thermistor, Type of semiconductor module: IGBT, Technology: EasyPACK™ 2B, Mechanical mounting: screw, Pulsed collector current: 200A, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Semiconductor structure: transistor/transistor, Case: AG-EASY2B-2, Gate-emitter voltage: ±20V.

Weitere Produktangebote FS100R12W2T7_B11

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
FS100R12W2T7B11BOMA1 INFINEON TECHNOLOGIES Infineon-FS100R12W2T7_B11-DS-v02_01-EN.pdf?fileId=5546d46267c74c9a01683d5d7ab56640 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 100A
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Technology: EasyPACK™ 2B
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Case: AG-EASY2B-2
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FS100R12W2T7B11BOMA1 Infineon-FS100R12W2T7_B11-DS-v02_01-EN.pdf?fileId=5546d46267c74c9a01683d5d7ab56640
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 100A
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Technology: EasyPACK™ 2B
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Case: AG-EASY2B-2
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH