FS10R12VT3BOMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MODULE 1200V 16A 64W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 64 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
auf Bestellung 118 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 32.36 EUR |
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Technische Details FS10R12VT3BOMA1 Infineon Technologies
Description: IGBT MODULE 1200V 16A 64W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 64 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 700 pF @ 25 V.
Weitere Produktangebote FS10R12VT3BOMA1 nach Preis ab 32.29 EUR bis 34.16 EUR
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FS10R12VT3BOMA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 16A 64W 11-Pin EASY750-1 Tray |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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FS10R12VT3BOMA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 16A 64W 11-Pin EASY750-1 Tray |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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FS10R12VT3BOMA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 16A 64W 11-Pin EASY750-1 Tray |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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FS10R12VT3BOMA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 16A 64W 11-Pin EASY750-1 Tray |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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| FS10R12VT3BOMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - FS10R12VT3BOMA1 - FS10R12 - IGBT MODULE tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 118 Stücke: Lieferzeit 14-21 Tag (e) |
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FS10R12VT3BOMA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 16A 64000000mW 11-Pin EASY750-1 Tray |
Produkt ist nicht verfügbar |
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| FS10R12VT3BOMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Transistor/transistor; IGBT three-phase bridge; Urmax: 1.2kV Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 20A Power dissipation: 64W Electrical mounting: Press-in PCB Technology: EasyPACK™ Topology: IGBT three-phase bridge Type of semiconductor module: IGBT Case: AG-EASY750-1 Anzahl je Verpackung: 40 Stücke |
Produkt ist nicht verfügbar |
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FS10R12VT3BOMA1 | Hersteller : Infineon Technologies |
Description: IGBT MODULE 1200V 16A 64W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 64 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 700 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FS10R12VT3BOMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Transistor/transistor; IGBT three-phase bridge; Urmax: 1.2kV Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 20A Power dissipation: 64W Electrical mounting: Press-in PCB Technology: EasyPACK™ Topology: IGBT three-phase bridge Type of semiconductor module: IGBT Case: AG-EASY750-1 |
Produkt ist nicht verfügbar |