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FS150R12KT4B9BOSA1

FS150R12KT4B9BOSA1 Infineon Technologies

Infineon-FS150R12KT4_B9-DS-v02_02-en_de.pdf?fileId=db3a30431ed1d7b2011f47306f3756f0
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 150A 750W
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 750 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Technische Details FS150R12KT4B9BOSA1 Infineon Technologies

Description: IGBT MOD 1200V 150A 750W, Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 750 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 150 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A, Operating Temperature: -40°C ~ 150°C, Configuration: Three Phase Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.