Technische Details FS150R12PT4 Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 200 A, IGBT Type: Trench Field Stop, Supplier Device Package: AG-ECONO4-1-1, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Three Phase Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk, Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 680 W.
Weitere Produktangebote FS150R12PT4 nach Preis ab 240.96 EUR bis 309.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
| FS150R12PT4 | Infineon Technologies |
 Description: INSULATED GATE BIPOLAR TRANSISTOVoltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 200 A IGBT Type: Trench Field Stop Supplier Device Package: AG-ECONO4-1-1 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 680 W |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| FS150R12PT4 | Infineon Technologies |
IGBT Modules IGBT 1200V 150A |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FS150R12PT4 |
|
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO4-1-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 680 W
Description: INSULATED GATE BIPOLAR TRANSISTO
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO4-1-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 680 W
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 270.87 EUR |
| FS150R12PT4 |
|
Hersteller: Infineon Technologies
IGBT Modules IGBT 1200V 150A
IGBT Modules IGBT 1200V 150A
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 309.59 EUR |
| 12+ | 240.96 EUR |