FS200R07N3E4RB11BOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MOD 650V 200A 600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 422.86 EUR |
| 10+ | 396.07 EUR |
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Technische Details FS200R07N3E4RB11BOSA1 Infineon Technologies
Description: IGBT MOD 650V 200A 600W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 600 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 13 nF @ 25 V.
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