FS35R12W1T4B11BOMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MOD 1200V 65A 225W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 225 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 75.42 EUR |
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Technische Details FS35R12W1T4B11BOMA1 Infineon Technologies
Description: IGBT MOD 1200V 65A 225W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 65 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 225 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 2 nF @ 25 V.
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FS35R12W1T4B11BOMA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 65A 225000mW 21-Pin EASY1B-2 Tray |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |