FS50R07N2E4B11BOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MODULE 650V 70A 190W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 190 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 87.97 EUR |
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Technische Details FS50R07N2E4B11BOSA1 Infineon Technologies
Description: IGBT MODULE 650V 70A 190W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Obsolete, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 190 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V.
Weitere Produktangebote FS50R07N2E4B11BOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FS50R07N2E4B11BOSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - FS50R07N2E4B11BOSA1 - FS50R07 - IGBT MODULE tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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FS50R07N2E4B11BOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 650V 70A 190000mW 25-Pin ECONO2-6 Tray |
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