FS50R12W2T7B11BOMA1 Infineon Technologies

Description: IGBT MOD 1200V 50A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 175°C, Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A (Typ), NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 7.9 µA, Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V.