FS660R08A6P2FLBBPSA1 Infineon Technologies
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 699.14 EUR |
12+ | 676.65 EUR |
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Technische Details FS660R08A6P2FLBBPSA1 Infineon Technologies
Description: HYBRID PACK DRIVE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A, NTC Thermistor: Yes, Supplier Device Package: AG-HYBRIDD-1, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 450 A, Voltage - Collector Emitter Breakdown (Max): 750 V, Power - Max: 1053 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 80 nF @ 50 V.
Weitere Produktangebote FS660R08A6P2FLBBPSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
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FS660R08A6P2FLBBPSA1 | Hersteller : Infineon Technologies | Trans IGBT Module N-CH 750V 450A 1053000mW Automotive 33-Pin HYBRIDD-1 Tray |
Produkt ist nicht verfügbar |
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FS660R08A6P2FLBBPSA1 | Hersteller : Infineon Technologies |
Description: HYBRID PACK DRIVE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A NTC Thermistor: Yes Supplier Device Package: AG-HYBRIDD-1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 750 V Power - Max: 1053 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 80 nF @ 50 V |
Produkt ist nicht verfügbar |