FW276-TL-2H Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Tc)
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 700mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 20V
Rds On (Max) @ Id, Vgs: 12.1Ohm @ 350mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
FET Feature: Logic Level Gate, 10V Drive
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 8-SOIC
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 740+ | 0.72 EUR |
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Technische Details FW276-TL-2H Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W (Tc), Drain to Source Voltage (Vdss): 450V, Current - Continuous Drain (Id) @ 25°C: 700mA (Tc), Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 20V, Rds On (Max) @ Id, Vgs: 12.1Ohm @ 350mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V, FET Feature: Logic Level Gate, 10V Drive, Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote FW276-TL-2H
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| FW276-TL-2H | Hersteller : ONSEMI |
Description: ONSEMI - FW276-TL-2H - NCH DUAL 400V 0.7A SOIC8 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 21985 Stücke: Lieferzeit 14-21 Tag (e) |