FW907-TL-E onsemi
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 10A/8A 8SOP
Supplier Device Package: 8-SOP
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 260+ | 1.89 EUR |
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Technische Details FW907-TL-E onsemi
Description: MOSFET N/P-CH 30V 10A/8A 8SOP, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.173", 4.40mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: 8-SOP, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 10A, 8A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2.5W.
Weitere Produktangebote FW907-TL-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FW907-TL-E | onsemi |
Description: MOSFET N/P-CH 30V 10A/8A 8SOPTechnology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 8-SOP FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Current - Continuous Drain (Id) @ 25°C: 10A, 8A Drain to Source Voltage (Vdss): 30V Power - Max: 2.5W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FW907-TL-E |
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Hersteller: onsemi
Description: MOSFET N/P-CH 30V 10A/8A 8SOP
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOP
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.5W
Description: MOSFET N/P-CH 30V 10A/8A 8SOP
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOP
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.5W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
