FZ1200R45KL3B5NOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MODULE 4500V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4046.03 EUR |
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Technische Details FZ1200R45KL3B5NOSA1 Infineon Technologies
Description: IGBT MODULE 4500V 1200A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -50°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1200A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Active, Current - Collector (Ic) (Max): 1200 A, Voltage - Collector Emitter Breakdown (Max): 4500 V, Power - Max: 13500 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 280 nF @ 25 V.
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Preis ohne MwSt |
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FZ1200R45KL3B5NOSA1 | Hersteller : Infineon Technologies |
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