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FZ1200R45KL3B5NOSA1

FZ1200R45KL3B5NOSA1 Infineon Technologies

Infineon-FZ1200R45KL3_B5-DS-v03_00-en_de.pdf?fileId=db3a30433dd42dcf013dd5609e070303
Hersteller: Infineon Technologies
Description: IGBT MODULE 4500V 1200A
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 13500 W
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector (Ic) (Max): 1200 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1200A
Operating Temperature: -50°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Technische Details FZ1200R45KL3B5NOSA1 Infineon Technologies

Description: IGBT MODULE 4500V 1200A, Input Capacitance (Cies) @ Vce: 280 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 13500 W, Voltage - Collector Emitter Breakdown (Max): 4500 V, Current - Collector (Ic) (Max): 1200 A, Part Status: Active, Supplier Device Package: Module, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1200A, Operating Temperature: -50°C ~ 125°C, Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.