FZ800R45KL3B5NOSA2 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MOD 4500V 1600A 9000W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Parallel
Operating Temperature: -50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 800A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Power - Max: 9000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
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Technische Details FZ800R45KL3B5NOSA2 Infineon Technologies
Description: IGBT MOD 4500V 1600A 9000W MOD, Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 9000 W, Voltage - Collector Emitter Breakdown (Max): 4500 V, Current - Collector (Ic) (Max): 1600 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 800A, Operating Temperature: -50°C ~ 125°C, Configuration: Dual, Parallel, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Weitere Produktangebote FZ800R45KL3B5NOSA2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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FZ800R45KL3B5NOSA2 | Infineon Technologies |
Description: IGBT MOD 4500V 1600A 9000W MOD Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 9000 W Voltage - Collector Emitter Breakdown (Max): 4500 V Current - Collector (Ic) (Max): 1600 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 800A Operating Temperature: -50°C ~ 125°C Configuration: Dual, Parallel Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FZ800R45KL3B5NOSA2 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; Ic: 800A; 9kW; Field Stop,Trench; screw Power dissipation: 9kW Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 1.6kA Gate-emitter voltage: ±20V Collector current: 800A Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
FZ800R45KL3B5NOSA2 | Infineon Technologies |
IGBT Power Module |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FZ800R45KL3B5NOSA2 |
|
Hersteller: Infineon Technologies
Description: IGBT MOD 4500V 1600A 9000W MOD
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 9000 W
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector (Ic) (Max): 1600 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 800A
Operating Temperature: -50°C ~ 125°C
Configuration: Dual, Parallel
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: IGBT MOD 4500V 1600A 9000W MOD
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 9000 W
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector (Ic) (Max): 1600 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 800A
Operating Temperature: -50°C ~ 125°C
Configuration: Dual, Parallel
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FZ800R45KL3B5NOSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; Ic: 800A; 9kW; Field Stop,Trench; screw
Power dissipation: 9kW
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 1.6kA
Gate-emitter voltage: ±20V
Collector current: 800A
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; Ic: 800A; 9kW; Field Stop,Trench; screw
Power dissipation: 9kW
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 1.6kA
Gate-emitter voltage: ±20V
Collector current: 800A
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FZ800R45KL3B5NOSA2 |
|
Hersteller: Infineon Technologies
IGBT Power Module
IGBT Power Module
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH