FZT655TA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS NPN 150V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 2 W
| Anzahl | Preis |
|---|---|
| 1000+ | 0.62 EUR |
| 2000+ | 0.57 EUR |
| 3000+ | 0.54 EUR |
| 5000+ | 0.51 EUR |
| 7000+ | 0.49 EUR |
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Technische Details FZT655TA Diodes Incorporated
Description: TRANS NPN 150V 1A SOT-223-3, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V, Frequency - Transition: 30MHz, Supplier Device Package: SOT-223-3, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 2 W.
Weitere Produktangebote FZT655TA nach Preis ab 0.39 EUR bis 2.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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FZT655TA | Diodes Incorporated |
Bipolar Transistors - BJT NPN High Voltage |
auf Bestellung 1510 Stücke: Lieferzeit 10-14 Tag (e) |
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FZT655TA | Diodes Incorporated |
Description: TRANS NPN 150V 1A SOT-223-3 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V Frequency - Transition: 30MHz Supplier Device Package: SOT-223-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 2 W |
auf Bestellung 7112 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FZT655TA |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT NPN High Voltage
Bipolar Transistors - BJT NPN High Voltage
auf Bestellung 1510 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.65 EUR |
| 10+ | 0.92 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.44 EUR |
| 2000+ | 0.39 EUR |
| FZT655TA |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 150V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 2 W
Description: TRANS NPN 150V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 2 W
auf Bestellung 7112 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.09 EUR |
| 14+ | 1.32 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.68 EUR |