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G050P03S

G050P03S Goford Semiconductor

G050P03S.pdf
Hersteller: Goford Semiconductor
Description: P-30V,-25A,RD(MAX)<5.5M@-10V,VTH
Input Capacitance (Ciss) (Max) @ Vds: 7221 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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12+1.54 EUR
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500+0.8 EUR
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2000+0.67 EUR
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Technische Details G050P03S Goford Semiconductor

Description: P-30V,-25A,RD(MAX).

Weitere Produktangebote G050P03S

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G050P03S G050P03S Hersteller : Goford Semiconductor G050P03S.pdf Description: P-30V,-25A,RD(MAX)<5.5M@-10V,VTH
Input Capacitance (Ciss) (Max) @ Vds: 7221 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Im Einkaufswagen  Stück im Wert von  UAH