G05N06S2 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1374pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.76 EUR |
| 20+ | 1.09 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.49 EUR |
| 2000+ | 0.45 EUR |
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Technische Details G05N06S2 Goford Semiconductor
Description: MOSFET 2N-CH 60V 5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1374pF @ 30V, Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP.
Weitere Produktangebote G05N06S2 nach Preis ab 0.29 EUR bis 0.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
| G05N06S2 | GOFORD Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| G05N06S2 |
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Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.31 EUR |
| 16000+ | 0.29 EUR |