G080P06T Goford Semiconductor
Hersteller: Goford Semiconductor
Description: P-60V,-195A,RD(MAX)<7.5M@-10V,VT
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 14692 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.57 EUR |
| 10+ | 3.62 EUR |
| 50+ | 2.76 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
4 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details G080P06T Goford Semiconductor
Description: MOSFET P-CH 60V 195A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V, Power Dissipation (Max): 294W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V.
Weitere Produktangebote G080P06T nach Preis ab 1.33 EUR bis 1.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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G080P06T | GOFORD SEMICONDUCTOR |
Category: THT P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -195A; 294W; TO220 Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -60V Drain current: -195A Power dissipation: 294W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 186nC Kind of channel: enhancement |
auf Bestellung 985 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
| G080P06T | GOFORD Semiconductor |
P-CH,-60V,-195A,RD(max) Less Than 7.5mOhm at -10V,VTH -2V to -4V ,TO-220 |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| G080P06T |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: THT P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -195A; 294W; TO220
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -195A
Power dissipation: 294W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 186nC
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -195A; 294W; TO220
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -195A
Power dissipation: 294W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 186nC
Kind of channel: enhancement
auf Bestellung 985 Stücke:
Lieferzeit 14-21 Tag (e)
| G080P06T |
|
Hersteller: GOFORD Semiconductor
P-CH,-60V,-195A,RD(max) Less Than 7.5mOhm at -10V,VTH -2V to -4V ,TO-220
P-CH,-60V,-195A,RD(max) Less Than 7.5mOhm at -10V,VTH -2V to -4V ,TO-220
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 130+ | 1.33 EUR |