G085P02TS Goford Semiconductor
Hersteller: Goford Semiconductor
Description: P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.05W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.37 EUR |
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Technische Details G085P02TS Goford Semiconductor
Description: P-20V,-8.2A,RD(MAX).
Weitere Produktangebote G085P02TS nach Preis ab 0.41 EUR bis 1.06 EUR
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G085P02TS | Hersteller : Goford Semiconductor |
Description: P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.05W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 4.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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