G12P06K GOFORD Semiconductor
Hersteller: GOFORD Semiconductor
P-CH,-60V,-12A,RD(max) Less Than 75mOhm at -10V,RD(max) Less Than 120mOhm at -4.5V,VTH -1.0V to -3.0V, TO-252
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Technische Details G12P06K GOFORD Semiconductor
Description: MOSFET P-CH 60V 12A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V, Power Dissipation (Max): 27W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.
Weitere Produktangebote G12P06K nach Preis ab 0.18 EUR bis 0.33 EUR
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G12P06K | GOFORD Semiconductor |
P-CH,-60V,-12A,RD(max) Less Than 75mOhm at -10V,RD(max) Less Than 120mOhm at -4.5V,VTH -1.0V to -3.0V, TO-252 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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G12P06K | GOFORD Semiconductor |
P-CH,-60V,-12A,RD(max) Less Than 75mOhm at -10V,RD(max) Less Than 120mOhm at -4.5V,VTH -1.0V to -3.0V, TO-252 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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G12P06K | Goford Semiconductor |
Description: MOSFET P-CH 60V 12A TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V |
auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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G12P06K | Goford Semiconductor |
Description: P-60V,-12A,RD(MAX)<75M@-10V,VTH- Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 6A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1322 pF @ 30 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| G12P06K | GOFORD Semiconductor |
P-CH,-60V,-12A,RD(max) Less Than 75mOhm at -10V,RD(max) Less Than 120mOhm at -4.5V,VTH -1.0V to -3.0V, TO-252 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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