G160N04D32 Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET,DUAL N-CH,40V,21A,23W,8-D
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
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Technische Details G160N04D32 Goford Semiconductor
Description: MOSFET,DUAL N-CH,40V,21A,23W,8-D, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-DFN (3.15x3.05).
Weitere Produktangebote G160N04D32
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G160N04D32 | Hersteller : Goford Semiconductor |
Description: MOSFET,DUAL N-CH,40V,21A,23W,8-D Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) |
Produkt ist nicht verfügbar |