G16N03S Goford Semiconductor

Description: MOSFET N-CH 30V 16A SOP-8, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.5W (Tc), FET Feature: Standard, Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).