G16P03D3 Goford Semiconductor
Hersteller: Goford SemiconductorDescription: P30V,RD(MAX)<12M@-10V,RD(MAX)<18
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.36 EUR |
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Technische Details G16P03D3 Goford Semiconductor
P-CH -30V -16A 12mOhmMAX at -10V 18mOhmMAX at -4.5V DFN3x3-8L.
Weitere Produktangebote G16P03D3 nach Preis ab 0.17 EUR bis 1.28 EUR
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G16P03D3 | Hersteller : Goford Semiconductor |
Description: P30V,RD(MAX)<12M@-10V,RD(MAX)<18 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 15 V |
auf Bestellung 4433 Stücke: Lieferzeit 10-14 Tag (e) |
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| G16P03D3 | Hersteller : GOFORD Semiconductor |
P-CH -30V -16A 12mOhmMAX at -10V 18mOhmMAX at -4.5V DFN3x3-8L |
auf Bestellung 180000 Stücke: Lieferzeit 14-21 Tag (e) |
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