G200P04S2 Goford Semiconductor
Hersteller: Goford SemiconductorDescription: P-40V,-9A,RD(MAX)<20M@-10V,VTH-1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2365pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 3147 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 1.6 EUR |
| 13+ | 1.4 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.85 EUR |
| 1000+ | 0.68 EUR |
| 2000+ | 0.62 EUR |
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Technische Details G200P04S2 Goford Semiconductor
Dual P-CH,-40V,-9A,RD(max) Less Than 20mOhm at -10V,RD(max) Less Than 25mOhm at -4.5V,VTH -1.0V to -2.5V, SOP-8.
Weitere Produktangebote G200P04S2 nach Preis ab 0.41 EUR bis 0.41 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| G200P04S2 | Hersteller : GOFORD Semiconductor |
Dual P-CH,-40V,-9A,RD(max) Less Than 20mOhm at -10V,RD(max) Less Than 25mOhm at -4.5V,VTH -1.0V to -2.5V, SOP-8 |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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G200P04S2 | Hersteller : Goford Semiconductor |
Description: P-40V,-9A,RD(MAX)<20M@-10V,VTH-1 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2365pF @ 20V Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
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