G20P10KE Goford Semiconductor
Hersteller: Goford SemiconductorDescription: P-CH, -100V, 20A, RD(MAX)<116M@-
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 116mOhm @ 16A, 10V
FET Feature: Standard
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3354 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.6 EUR |
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Technische Details G20P10KE Goford Semiconductor
P-CH,-100V,-20A,RD(max) Less Than 116mOhm at -10V, VTH-1.0V to -3.0V, TO-252.
Weitere Produktangebote G20P10KE nach Preis ab 0.41 EUR bis 1.44 EUR
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G20P10KE | Hersteller : Goford Semiconductor |
Description: P-CH, -100V, 20A, RD(MAX)<116M@- Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 116mOhm @ 16A, 10V FET Feature: Standard Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3354 pF @ 50 V |
auf Bestellung 3529 Stücke: Lieferzeit 10-14 Tag (e) |
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| G20P10KE | Hersteller : GOFORD Semiconductor |
P-CH,-100V,-20A,RD(max) Less Than 116mOhm at -10V, VTH-1.0V to -3.0V, TO-252 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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