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G220P03D32

G220P03D32 Goford Semiconductor

G220P03D32.pdf Hersteller: Goford Semiconductor
Description: MOSFET 2P-CH 30V 12A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1305pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05) Dual
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Technische Details G220P03D32 Goford Semiconductor

Description: MOSFET 2P-CH 30V 12A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 30W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1305pF @ 15V, Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-DFN (3.15x3.05) Dual.

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G220P03D32 G220P03D32 Hersteller : Goford Semiconductor G220P03D32.pdf Description: MOSFET 2P-CH 30V 12A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1305pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05) Dual
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Im Einkaufswagen  Stück im Wert von  UAH