Produkte > GOFORD SEMICONDUCTOR > G230P06D5
G230P06D5

G230P06D5 Goford Semiconductor

G230P06D5.pdf Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 48A DFN5*6-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V
auf Bestellung 4790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
14+1.3 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.6 EUR
2000+0.55 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details G230P06D5 Goford Semiconductor

Description: MOSFET P-CH 60V 48A DFN5*6-8L, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V, Power Dissipation (Max): 105W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFN (4.9x5.75), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V.

Weitere Produktangebote G230P06D5

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
G230P06D5 G230P06D5 Hersteller : Goford Semiconductor G230P06D5.pdf Description: MOSFET P-CH 60V 48A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH