G230P06D5 Goford Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.49 EUR |
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Technische Details G230P06D5 Goford Semiconductor
Description: MOSFET P-CH 60V 48A DFN5*6-8L, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V, Power Dissipation (Max): 105W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFN (4.9x5.75), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V.
Weitere Produktangebote G230P06D5 nach Preis ab 0.73 EUR bis 2.68 EUR
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G230P06D5 | Goford Semiconductor |
 Description: MOSFET P-CH 60V 48A DFN5*6-8LPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V |
auf Bestellung 3324 Stücke: Lieferzeit 10-14 Tag (e) |
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| G230P06D5 |
|
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 48A DFN5*6-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V
Description: MOSFET P-CH 60V 48A DFN5*6-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V
auf Bestellung 3324 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.68 EUR |
| 13+ | 1.69 EUR |
| 100+ | 1.12 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.8 EUR |
| 2000+ | 0.73 EUR |