G230P06T Goford Semiconductor
Hersteller: Goford Semiconductor
Description: P-60V,-60A,RD(MAX)<20M@-10V,VTH-
Input Capacitance (Ciss) (Max) @ Vds: 4499 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details G230P06T Goford Semiconductor
Description: MOSFET P-CH 60V 60A TO-220, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 115W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V.
Weitere Produktangebote G230P06T nach Preis ab 0.64 EUR bis 0.64 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| G230P06T | GOFORD Semiconductor |
P-CH,-60V,-60A,RD(max) Less Than 20mOhm at -10V,VTH -2.0V to -4.0V ,TO-220 |
auf Bestellung 1750 Stücke: Lieferzeit 14-21 Tag (e) |
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| G230P06T |
|
Hersteller: GOFORD Semiconductor
P-CH,-60V,-60A,RD(max) Less Than 20mOhm at -10V,VTH -2.0V to -4.0V ,TO-220
P-CH,-60V,-60A,RD(max) Less Than 20mOhm at -10V,VTH -2.0V to -4.0V ,TO-220
auf Bestellung 1750 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 275+ | 0.64 EUR |