G230P06T Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 60A TO-220
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
| Anzahl | Preis |
|---|---|
| 2000+ | 0.56 EUR |
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Technische Details G230P06T Goford Semiconductor
Description: MOSFET P-CH 60V 60A TO-220, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 115W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V.
Weitere Produktangebote G230P06T nach Preis ab 2.36 EUR bis 2.36 EUR
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G230P06T | Hersteller : Goford Semiconductor |
Description: P-60V,-60A,RD(MAX)<20M@-10V,VTH- Input Capacitance (Ciss) (Max) @ Vds: 4499 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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