G3401L Goford Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.1 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details G3401L Goford Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.4A; 1.3W; SOT23, Power dissipation: 1.3W, Gate charge: 9.3nC, Polarisation: unipolar, Technology: Trench, Drain current: -4.4A, Kind of channel: enhancement, Drain-source voltage: -30V, Type of transistor: P-MOSFET, Gate-source voltage: ±12V, Case: SOT23, Mounting: SMD.
Weitere Produktangebote G3401L nach Preis ab 0.084 EUR bis 0.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
G3401L | Goford Semiconductor |
 Description: P30V,RD(MAX)<60M@-10V,RD(MAX)<70Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V Power Dissipation (Max): 1.3W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 652 pF @ 15 V |
auf Bestellung 1233 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| G3401L | GOFORD Semiconductor |
P-CH 30V -4.2A 60mOhm/MAX at -10V,70mOhm/MAX at -4.5V SOT-23-3L |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| G3401L |
|
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<60M@-10V,RD(MAX)<70
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Power Dissipation (Max): 1.3W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 652 pF @ 15 V
Description: P30V,RD(MAX)<60M@-10V,RD(MAX)<70
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Power Dissipation (Max): 1.3W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 652 pF @ 15 V
auf Bestellung 1233 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.77 EUR |
| 45+ | 0.48 EUR |
| 62+ | 0.35 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| G3401L |
|
Hersteller: GOFORD Semiconductor
P-CH 30V -4.2A 60mOhm/MAX at -10V,70mOhm/MAX at -4.5V SOT-23-3L
P-CH 30V -4.2A 60mOhm/MAX at -10V,70mOhm/MAX at -4.5V SOT-23-3L
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.084 EUR |