G350P02LLE Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET P-CH 20V 4.5A SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1126 pF @ 10 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.077 EUR |
| 15000+ | 0.071 EUR |
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Technische Details G350P02LLE Goford Semiconductor
Description: MOSFET P-CH 20V 4.5A SOT-23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, FET Feature: Standard, Power Dissipation (Max): 1.4W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-6L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1126 pF @ 10 V.
Weitere Produktangebote G350P02LLE nach Preis ab 0.07 EUR bis 0.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
| G350P02LLE | Hersteller : GOFORD Semiconductor |
P-CH -20V -4.5A 35mOhm/MAX at -4.5V,45mOhm/MAX at -2.5V SOT-23-6L |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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