G3F18MT12J-TR GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: 1200V 18M TO-263-7 G3F SIC MOSFE
Vgs(th) (Max) @ Id: 4.3V @ 35mA
Power Dissipation (Max): 526W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 18V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4962 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-263-7
Current - Continuous Drain (Id) @ 25°C: 122A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details G3F18MT12J-TR GeneSiC Semiconductor
Description: 1200V 18M TO-263-7 G3F SIC MOSFE, Vgs(th) (Max) @ Id: 4.3V @ 35mA, Power Dissipation (Max): 526W (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 18V, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4962 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 18V, Grade: Automotive, Supplier Device Package: TO-263-7, Current - Continuous Drain (Id) @ 25°C: 122A (Tc), FET Type: N-Channel, Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Weitere Produktangebote G3F18MT12J-TR nach Preis ab 32.88 EUR bis 56.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
G3F18MT12J-TR | GeneSiC Semiconductor | SiC MOSFETs 1200V 18mohm TO-263-7 G3F SiC MOSFET |
auf Bestellung 785 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
G3F18MT12J-TR | GeneSiC Semiconductor |
Description: 1200V 18M TO-263-7 G3F SIC MOSFE Vgs(th) (Max) @ Id: 4.3V @ 35mA Power Dissipation (Max): 526W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 18V Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4962 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V Grade: Automotive Supplier Device Package: TO-263-7 Current - Continuous Drain (Id) @ 25°C: 122A (Tc) FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
|
| G3F18MT12J-TR |
Hersteller: GeneSiC Semiconductor
SiC MOSFETs 1200V 18mohm TO-263-7 G3F SiC MOSFET
SiC MOSFETs 1200V 18mohm TO-263-7 G3F SiC MOSFET
auf Bestellung 785 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 41.36 EUR |
| 10+ | 37.57 EUR |
| 25+ | 36.19 EUR |
| 100+ | 34.16 EUR |
| 250+ | 32.88 EUR |
| G3F18MT12J-TR |
Hersteller: GeneSiC Semiconductor
Description: 1200V 18M TO-263-7 G3F SIC MOSFE
Vgs(th) (Max) @ Id: 4.3V @ 35mA
Power Dissipation (Max): 526W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 18V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4962 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-263-7
Current - Continuous Drain (Id) @ 25°C: 122A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: 1200V 18M TO-263-7 G3F SIC MOSFE
Vgs(th) (Max) @ Id: 4.3V @ 35mA
Power Dissipation (Max): 526W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 18V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4962 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-263-7
Current - Continuous Drain (Id) @ 25°C: 122A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 56.76 EUR |
| 10+ | 41.5 EUR |
| 100+ | 35.21 EUR |