G3F18MT12J-TR

G3F18MT12J-TR GeneSiC Semiconductor


Hersteller: GeneSiC Semiconductor
Description: 1200V 18M TO-263-7 G3F SIC MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 122A (Tc)
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4962 pF @ 800 V
Qualification: AEC-Q101
Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 18V
Power Dissipation (Max): 526W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 35mA
auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+29.59 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details G3F18MT12J-TR GeneSiC Semiconductor

Description: 1200V 18M TO-263-7 G3F SIC MOSFE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 122A (Tc), Supplier Device Package: TO-263-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4962 pF @ 800 V, Qualification: AEC-Q101, Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 18V, Power Dissipation (Max): 526W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 35mA.

Weitere Produktangebote G3F18MT12J-TR nach Preis ab 29.59 EUR bis 47.70 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
G3F18MT12J-TR G3F18MT12J-TR Hersteller : GeneSiC Semiconductor SiC MOSFETs 1200V 18mohm TO-263-7 G3F SiC MOSFET
auf Bestellung 798 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.39 EUR
10+34.88 EUR
25+33.60 EUR
100+31.70 EUR
250+30.55 EUR
Im Einkaufswagen  Stück im Wert von  UAH
G3F18MT12J-TR G3F18MT12J-TR Hersteller : GeneSiC Semiconductor Description: 1200V 18M TO-263-7 G3F SIC MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 122A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 18V
Power Dissipation (Max): 526W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 35mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4962 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+47.70 EUR
10+34.87 EUR
100+29.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH