G3F34MT12J-TR GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: 1200V 34M TO-263-7 G3F SIC MOSFE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-263-7
Power Dissipation (Max): 300W (Tc)
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4.3V @ 18mA
Rds On (Max) @ Id, Vgs: 45mOhm @ 26A, 18V
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Technische Details G3F34MT12J-TR GeneSiC Semiconductor
Description: 1200V 34M TO-263-7 G3F SIC MOSFE, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 18V, Grade: Automotive, Supplier Device Package: TO-263-7, Power Dissipation (Max): 300W (Tc), Current - Continuous Drain (Id) @ 25°C: 68A (Tc), FET Type: N-Channel, Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 4.3V @ 18mA, Rds On (Max) @ Id, Vgs: 45mOhm @ 26A, 18V.
Weitere Produktangebote G3F34MT12J-TR nach Preis ab 19.21 EUR bis 37.18 EUR
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G3F34MT12J-TR | GeneSiC Semiconductor | SiC MOSFETs 1200V 34mohm TO-263-7 G3F SiC MOSFET |
auf Bestellung 1547 Stücke: Lieferzeit 10-14 Tag (e) |
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G3F34MT12J-TR | GeneSiC Semiconductor |
Description: 1200V 34M TO-263-7 G3F SIC MOSFE Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V Grade: Automotive Supplier Device Package: TO-263-7 Power Dissipation (Max): 300W (Tc) Current - Continuous Drain (Id) @ 25°C: 68A (Tc) FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 4.3V @ 18mA Rds On (Max) @ Id, Vgs: 45mOhm @ 26A, 18V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| G3F34MT12J-TR |
Hersteller: GeneSiC Semiconductor
SiC MOSFETs 1200V 34mohm TO-263-7 G3F SiC MOSFET
SiC MOSFETs 1200V 34mohm TO-263-7 G3F SiC MOSFET
auf Bestellung 1547 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.85 EUR |
| 10+ | 22.32 EUR |
| 25+ | 20.97 EUR |
| 100+ | 20.09 EUR |
| 250+ | 19.5 EUR |
| 500+ | 19.21 EUR |
| G3F34MT12J-TR |
Hersteller: GeneSiC Semiconductor
Description: 1200V 34M TO-263-7 G3F SIC MOSFE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-263-7
Power Dissipation (Max): 300W (Tc)
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 4.3V @ 18mA
Rds On (Max) @ Id, Vgs: 45mOhm @ 26A, 18V
Description: 1200V 34M TO-263-7 G3F SIC MOSFE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-263-7
Power Dissipation (Max): 300W (Tc)
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 4.3V @ 18mA
Rds On (Max) @ Id, Vgs: 45mOhm @ 26A, 18V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 37.18 EUR |
| 10+ | 26.49 EUR |
| 100+ | 20.55 EUR |