G3F40MT12J-TR GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: 1200V 40M TO-263-7 G3F SIC MOSFE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2023 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4.3V @ 16mA
Power Dissipation (Max): 270W (Tc)
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Produktrezensionen
Produktbewertung abgeben
Technische Details G3F40MT12J-TR GeneSiC Semiconductor
Description: 1200V 40M TO-263-7 G3F SIC MOSFE, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2023 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 18V, Grade: Automotive, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 4.3V @ 16mA, Power Dissipation (Max): 270W (Tc), Current - Continuous Drain (Id) @ 25°C: 59A (Tc), FET Type: N-Channel, Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR), Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V.
Weitere Produktangebote G3F40MT12J-TR nach Preis ab 14.3 EUR bis 29.54 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
G3F40MT12J-TR | GeneSiC Semiconductor | SiC MOSFETs 1200V 40mohm TO-263-7 G3F SiC MOSFET |
auf Bestellung 786 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
G3F40MT12J-TR | GeneSiC Semiconductor |
Description: 1200V 40M TO-263-7 G3F SIC MOSFE Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2023 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V Grade: Automotive Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 4.3V @ 16mA Power Dissipation (Max): 270W (Tc) Current - Continuous Drain (Id) @ 25°C: 59A (Tc) FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
|
| G3F40MT12J-TR |
Hersteller: GeneSiC Semiconductor
SiC MOSFETs 1200V 40mohm TO-263-7 G3F SiC MOSFET
SiC MOSFETs 1200V 40mohm TO-263-7 G3F SiC MOSFET
auf Bestellung 786 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 19.23 EUR |
| 10+ | 16.61 EUR |
| 25+ | 15.6 EUR |
| 100+ | 14.96 EUR |
| 250+ | 14.49 EUR |
| 500+ | 14.3 EUR |
| G3F40MT12J-TR |
Hersteller: GeneSiC Semiconductor
Description: 1200V 40M TO-263-7 G3F SIC MOSFE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2023 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4.3V @ 16mA
Power Dissipation (Max): 270W (Tc)
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Description: 1200V 40M TO-263-7 G3F SIC MOSFE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2023 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4.3V @ 16mA
Power Dissipation (Max): 270W (Tc)
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 29.54 EUR |
| 10+ | 20.78 EUR |
| 100+ | 15.84 EUR |