G3R350MT12J GeneSiC SEMICONDUCTOR
Hersteller: GeneSiC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 75W
Technology: G3R™; SiC
Mounting: SMD
Case: TO263-7
Power dissipation: 75W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: -5...15V
Pulsed drain current: 16A
Drain-source voltage: 1.2kV
Drain current: 8A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
auf Bestellung 746 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 5.58 EUR |
| 14+ | 5.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details G3R350MT12J GeneSiC SEMICONDUCTOR
Description: SIC MOSFET N-CH 11A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 2.69V @ 2mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V.
Weitere Produktangebote G3R350MT12J nach Preis ab 4.23 EUR bis 9.01 EUR
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G3R350MT12J | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 75W Technology: G3R™; SiC Mounting: SMD Case: TO263-7 Power dissipation: 75W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 12nC Kind of channel: enhancement Gate-source voltage: -5...15V Pulsed drain current: 16A Drain-source voltage: 1.2kV Drain current: 8A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 746 Stücke: Lieferzeit 7-14 Tag (e) |
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G3R350MT12J | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R350MT12J | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R350MT12J | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R350MT12J | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R350MT12J | Hersteller : GeneSiC Semiconductor |
MOSFET 1200V 350mohm TO-263-7 G3R SiC MOSFET |
auf Bestellung 2254 Stücke: Lieferzeit 10-14 Tag (e) |
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G3R350MT12J | Hersteller : GENESIC |
Description: GENESIC - G3R350MT12J - Siliziumkarbid-MOSFET, Eins, n-Kanal, 11 A, 1.2 kV, 0.35 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.69V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 75W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: G3R productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.35ohm SVHC: No SVHC (17-Dec-2015) |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| G3R350MT12J | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R350MT12J | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
Produkt ist nicht verfügbar |
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G3R350MT12J | Hersteller : GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 11A TO263-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 2mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V |
Produkt ist nicht verfügbar |