G3R350MT12J GeneSiC Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 9.01 EUR |
| 10+ | 8.04 EUR |
| 25+ | 7.67 EUR |
| 100+ | 7.16 EUR |
| 250+ | 6.85 EUR |
| 500+ | 6.62 EUR |
| 1000+ | 6.39 EUR |
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Technische Details G3R350MT12J GeneSiC Semiconductor
Description: SIC MOSFET N-CH 11A TO263-7, Vgs(th) (Max) @ Id: 2.69V @ 2mA, Power Dissipation (Max): 75W (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-263-7.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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G3R350MT12J | Hersteller : GeneSiC Semiconductor |
 Description: SIC MOSFET N-CH 11A TO263-7Vgs(th) (Max) @ Id: 2.69V @ 2mA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TO-263-7 |
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