Weitere Produktangebote G3R40MT12D nach Preis ab 17.2 EUR bis 33.21 EUR
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G3R40MT12D | Hersteller : GeneSiC SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 106nC On-state resistance: 40mΩ Drain current: 50A Pulsed drain current: 140A Power dissipation: 333W Drain-source voltage: 1.2kV Case: TO247-3 Kind of channel: enhancement Mounting: THT Technology: G3R™; SiC |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R40MT12D | Hersteller : GeneSiC Semiconductor |
SiC MOSFETs 1200V 40mohm TO-247-3 G3R SiC MOSFET |
auf Bestellung 541 Stücke: Lieferzeit 10-14 Tag (e) |
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G3R40MT12D | Hersteller : Navitas Semiconductor, Inc. |
Description: SIC MOSFET N-CH 71A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 10mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V |
auf Bestellung 1748 Stücke: Lieferzeit 10-14 Tag (e) |
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