G3R40MT12D

Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 106nC
On-state resistance: 40mΩ
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 333W
Drain-source voltage: 1.2kV
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Technology: G3R™; SiC

Hersteller: GeneSiC Semiconductor
SiC MOSFETs 1200V 40mohm TO-247-3 G3R SiC MOSFET

Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 71A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V