G3R450MT17J GeneSiC SEMICONDUCTOR
Hersteller: GeneSiC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 91W
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 18nC
On-state resistance: 0.45Ω
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 91W
Drain-source voltage: 1.7kV
Case: TO263-7
Anzahl je Verpackung: 1 Stücke
auf Bestellung 841 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 7.72 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details G3R450MT17J GeneSiC SEMICONDUCTOR
Description: SIC MOSFET N-CH 9A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V, Power Dissipation (Max): 91W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 2mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V.
Weitere Produktangebote G3R450MT17J nach Preis ab 7.72 EUR bis 14.64 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
G3R450MT17J | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 91W Kind of package: tube Kind of channel: enhancement Technology: G3R™; SiC Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 18nC On-state resistance: 0.45Ω Drain current: 6A Pulsed drain current: 16A Power dissipation: 91W Drain-source voltage: 1.7kV Case: TO263-7 |
auf Bestellung 841 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
G3R450MT17J | Hersteller : GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 9A TO263-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 2mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V |
auf Bestellung 5835 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
G3R450MT17J | Hersteller : GeneSiC Semiconductor |
MOSFET 1700V 450mO TO-263-7 G3R SiC MOSFET |
auf Bestellung 2991 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| G3R450MT17J | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 838 Stücke: Lieferzeit 14-21 Tag (e) |