G3R45MT17D GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 61A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V
Power Dissipation (Max): 438W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 8mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V
| Anzahl | Preis |
|---|---|
| 1+ | 49.1 EUR |
| 10+ | 45.03 EUR |
| 25+ | 43.52 EUR |
| 100+ | 41.31 EUR |
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Technische Details G3R45MT17D GeneSiC Semiconductor
Description: SIC MOSFET N-CH 61A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Tc), Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V, Power Dissipation (Max): 438W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 8mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V.
Weitere Produktangebote G3R45MT17D nach Preis ab 43.82 EUR bis 53.56 EUR
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G3R45MT17D | Hersteller : GeneSiC Semiconductor |
MOSFET 1700V 45mohm TO-247-3 G3R SiC MOSFET |
auf Bestellung 392 Stücke: Lieferzeit 10-14 Tag (e) |
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