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G3S12015P

G3S12015P Global Power Technology-GPT

1549315u.pdf Hersteller: Global Power Technology-GPT
Description: DIODE SIL CARB 1.2KV 42A TO247AC
Packaging: Cut Tape (CT)
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1379pF @ 0V, 1MHz
Current - Average Rectified (Io): 42A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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Technische Details G3S12015P Global Power Technology-GPT

Description: DIODE SIL CARB 1.2KV 42A TO247AC, Packaging: Tape & Box (TB), Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1379pF @ 0V, 1MHz, Current - Average Rectified (Io): 42A, Supplier Device Package: TO-247AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.

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G3S12015P G3S12015P Hersteller : Global Power Technology-GPT 1549315u.pdf Description: DIODE SIL CARB 1.2KV 42A TO247AC
Packaging: Tape & Box (TB)
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1379pF @ 0V, 1MHz
Current - Average Rectified (Io): 42A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar