G3S17020B Global Power Technology-GPT

Description: SIC SCHOTTKY DIODE 1700V 20A 3-P, Current - Reverse Leakage @ Vr: 100 µA @ 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1700 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247AB, Current - Average Rectified (Io) (per Diode): 24A (DC), Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tape & Box (TB).